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savantic semiconductor product specification silicon pnp power transistors 2SB1016 d escription with to-220fa package high breakdown voltage low collector saturation voltage complement to type 2sd1407 applications power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector -emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i b base current -0.5 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1016 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -2.0 v v be base-emitter voltage i c =-4a; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 40 240 h fe-2 dc current gain i c =-4a ; v ce =-5v 20 f t transition frequency i c =-1a; v ce =-5v 5 mhz c ob collector output capacitance f=1mhz ; v cb =-10v;i e =0 270 pf h fe-1 classifications r o y 40-80 70-140 120-240 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1016 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm) downloaded from: http:///
savantic semiconductor product specification 4 silicon pnp power transistors 2SB1016 downloaded from: http:///

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